for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 1 gaas phemt mmic low noise amplifier, 6 - 18 ghz v00.0310 general description features functional diagram low noise figure: 1.6 db high gain: 19 db p1db output power: 16 dbm single supply voltage: +3.5 v @ 90 ma output ip3: 27 dbm 50 ohm matched input/output die size: 1.33 x 1.08 x 0.1 mm electrical speci cations , t a = +25 c, vdd1 = vdd2 = +3.5v, idd = 90 ma [1] typical applications this HMC903 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? military & space ? test instrumentation the HMC903 is a self-biased gaas mmic low noise ampli er which operates between 6 and 18 ghz. this lna provides 19 db of small signal gain, 1.6 db noise gure, and output ip3 of 27 dbm, while requiring only 90 ma from a +3.5 v supply. the p1db output power of 16 dbm enables the lna to function as a lo driver for balanced, i/q or image reject mixers. the HMC903 also features i/os that are dc blocked and internally matched to 50 ohms for ease of integration into multi-chip-modules (mcms). all data is taken with the chip in a 50 ohm test xture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mils) length. HMC903 parameter min. typ. max. units frequency range 6 - 18 ghz gain 17 19 db gain variation over temperature 0.013 db / c noise figure 1.6 2.1 db input return loss 11 d b output return loss 13 db output power for 1 db compression 16 dbm saturated output power (psat) 18 dbm output third order intercept (ip3) 27 dbm supply current (idd) (vdd = 3.5v, vgg1 = vgg2 = open) 90 ma [1] vgg1 = vgg2 = open for normal, self-biased operation
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 2 HMC903 v00.0310 gaas phemt mmic low noise amplifier, 6 - 18 ghz gain vs. temperature output return loss vs. temperature broadband gain & return loss [1] input return loss vs. temperature output ip3 vs. temperature noise figure vs. temperature -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 +25c +85c -40c return loss (db) frequency (ghz) 5 10 15 20 25 30 35 6 8 10 12 14 16 18 +25c +85c -40c ip3 (dbm) frequency (ghz) -30 -25 -20 -15 -10 -5 0 6 8 10 12 14 16 18 +25c +85c -55c return loss (db) frequency (ghz) 15 17 19 21 23 25 6 8 10 12 14 16 18 +25c +85c -55c gain (db) frequency (ghz) -25 -15 -5 5 15 25 3 5 7 9 11 13 15 17 19 21 s21 s11 s22 response (db) frequency (ghz) 0 1 2 3 4 5 6 6 8 10 12 14 16 18 +25c +85c -55c noise figure (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 3 HMC903 v00.0310 gaas phemt mmic low noise amplifier, 6 - 18 ghz psat vs. temperature power compression @ 12 ghz p1db vs. temperature reverse isolation vs. temperature gain, noise figure & power vs. supply voltage @ 12 ghz -4 0 4 8 12 16 20 24 -21 -18 -15 -12 -9 -6 -3 0 3 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -60 -50 -40 -30 -20 -10 0 6 8 10 12 14 16 18 +25c +85c -55c isolation (db) frequency (ghz) 0 5 10 15 20 25 6 8 10 12 14 16 18 +25c +85c -55c psat (dbm) frequency (ghz) 0 5 10 15 20 25 6 8 10 12 14 16 18 +25c +85c -55c p1db (dbm) frequency (ghz) 8 10 12 14 16 18 20 22 0 1 2 3 4 5 6 7 3 3.5 4 p1db gain nf gain (db), p1db (dbm) noise figure (db) vdd (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 4 outline drawing absolute maximum ratings electrostatic sensitive device observe handling precautions drain bias voltage +4.5v rf input power +10 dbm gate bias voltage, vgg1 -0.8v to +0.2v gate bias voltage, vgg2 -0.8v to +0.2v channel temperature 175 c continuous pdiss (t = 85 c) (derate 6.9 mw/c above 85 c) 0.62 w thermal resistance (channel to die bottom) 144.8 c/ w storage temperature -65 to +150 c operating temperature -55 to +85 c HMC903 v00.0310 gaas phemt mmic low noise amplifier, 6 - 18 ghz this die utilizes fragile air bridges. any pick-up tools used must not contact the die in the cross hatched area. notes: 1. all dimensions in inches [millimeters] 2. die thickness is 0.004 (0.100) 3. typical bond pad is 0.004 (0.100) square 4. bond pad metalization: gold 5. backside metallization: gold 6. backside metal is ground 7. no connection required for unlabeled bond pads 8. overall die size is .002 die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 5 HMC903 v00.0310 gaas phemt mmic low noise amplifier, 6 - 18 ghz pad descriptions assembly diagram pad number function description interface schematic 1rfin this pin is ac coupled and matched to 50 ohms 2, 3 vdd2, vdd1 power supply voltage for the ampli er see assembly for required external components. 4rfout this pin is ac coupled and matched to 50 ohms 5, 6 vgg1, vgg2 optional gate control for ampli er. if left open, the ampli er will run at standard current. negative voltage applied will reduce current. die bottom gnd die bottom must be connected to rf/dc ground.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - low noise - smt 7 7 - 6 HMC903 v00.0310 gaas phemt mmic low noise amplifier, 6 - 18 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with two 1 mil wires are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.254mm (0.010?) thick mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
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